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| RoHS Compliant GaAs SP4T Switch DC - 4.0 GHz Features * * * * * Low Insertion Loss, 1.2 dB Typical Fast Switching Speed, 4 nS Typical Ultra Low DC Power Consumption Terminated Option RoHS* Compliant MASW4060G V3 Pad Layout Description M/A/COM's MASW4060G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4060G is fabricated using a mature 1micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability. Die Size - Inches (mm) 0.076 x 0.058 x 0.010 (1.920 x 1.470 x 0.25) Absolute Maximum Rating2,3 Parameter Absolute Maximum -8.5 Vdc +34 dBm -65C to +175C +175C Control Value (A or B) Ordering Information Part Number MASW4060G 1. Die quantity varies. Package DIE 1 Max Input RF Power Storage Temperature Max Operating Temperature Schematic 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. Bond Pad Dimensions Bond Pad RF RF1, RF2, RF3, RF4 A1, A2, A3, A4 B1, B2, B3, B4 G1, G2, G3, G4 4 T1, T2, T3, T4 5 Dimensions - Inches (mm) 0.005 x 0.005 (0.125 x 0.125) 0.004 x 0.004 (0.100 x 0.100) 0.004 x 0.004 (0.100 x 0.100) 0.004 x 0.004 (0.100 x 0.100) 0.008 x 0.004 (0.200 x 0.100) 0.006 x 0.005 (0.150 x 0.125) * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 4. "G" pads designate internal grounds necessary to maintain data sheet isolation. These are not DC blocked and would need to be blocked if positive control voltage is required. 5. "T" pads denote a 50 W termination path connected to each RFx port. If bonded to ground, it will cause the related port to be absorbative, or matched, in the isolated condition. As described in note 3, these pads are also not DC blocked. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant GaAs SP4T Switch DC - 4.0 GHz Electrical Specifications: 0/-5 Vdc, 50 , -55C to +85C 6 Parameter Insertion Loss MASW4060G V3 Test Conditions DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 4.0 GHz 0.5 GHz 0.5 - 4.0 GHz Two Tone Input Power up to +5 dBm 0.5 GHz 0.5 - 4.0 GHz Two Tone Input Power up to +5 dBm 0.5 GHz 0.5 - 4.0 GHz VIN Low (0 to -0.2 V) VOUT High (-5 V) 10% to 90% RF and 90% to 10% RF 50% control to 90% RF, and 50% control to 10% RF In Band Units dB dB dB dB dB dB dB dB Ratio Ratio Ratio Ratio dBm dBm dBm dBm dBm dBm A A nS nS mV Min. -- -- -- -- 50 45 40 30 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- +17 +27 +45 +60 +35 +46 -- 50 2 4 20 Max. 1.3 1.3 1.3 1.7 -- -- -- -- 1.4:1 1.4:1 1.5:1 2.0:1 -- -- -- -- -- -- 25 200 -- -- -- Isolation VSWR Input P-1dB IP2 IP3 Control Current T-rise, T-fall TON, TOFF Transients 6. Loss changes 0.0025 dB/C. (From -55C to +85C) Truth Table 7 A1 B1 A2 B2 A3 1 0 0 0 0 1 1 1 0 1 0 0 1 0 1 1 0 0 1 0 B3 A4 B4 1 1 0 1 0 0 0 1 1 1 1 0 ANT- ANT- ANT- ANTRF1 RF2 RF3 RF4 On Off Off Off Off On Off Off Off Off On Off Off Off Off On Wire Bonding A. Ball or wedge with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. GND bonds should be as short as possible; at least three and no more than four bond wires from ground pads to package are recommended. 7. 0 = 0 V to -0.2 V, 1 = -5 V. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant GaAs SP4T Switch DC - 4.0 GHz Typical Performance @ 25C Insertion Loss 2.0 MASW4060G V3 Handling Precautions Permanent damage to the MASW4060 may occur if the following precautions are not adhered to: A. Cleanliness - The MASW4060 should be handled in a clean environment. DO NOT attempt to clean unit after MASW4060 is installed. B. Static Sensitivity - All chip handling equipment and personnel should be DC grounded. C. Transient - Avoid instrument and power supply transients while bias is applied to the MASW4060. Use shielded signal and bias cables to minimize inductive pick-up. D. Bias - Apply voltage to either control port V1 or V2 only when the other is grounded. No port should be allowed to "float." E. General Handling - It is recommended that the MASW4060 chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. 1.5 1.0 0.5 0.0 0 1 2 3 4 Frequency (GHz) Isolation 65 60 Mounting The MASW4060 is back-metallized with Pd/Ni/Au (100/1,000/10,000A) metallization. It can be diemounted with AuSn eutectic performs or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin perform is recommended with a work surface temperature or approximately 225C and a tool temperature of 265C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290C. B. DO NOT expose the MASW4060 to a temperature greater than 320C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: A. Apply a minimum amount of epoxy and place the MASW4060 into position. A thin epoxy fillet should be visible around the perimeter of the chip. B. Cure epoxy per manufacturer's recommended schedule. C. Electrically conductive epoxy may be used but is not required. 4 55 50 45 40 35 0 1 2 3 4 Frequency (GHz) VSWR 1.4 1.3 1.2 1.1 1.0 0 1 2 3 Frequency (GHz) 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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